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| SI4980DY Vishay Siliconix Dual N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) 0.075 @ VGS = 10 V 0.095 @ VGS = 6.0 V ID (A) 3.7 3.2 D SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: SI4980DY SI4980DY-T1 (with Tape and Reel) S N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS Symbol VDS VGS Limit 80 "20 3.7 2.9 30 1.7 2.0 1.3 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70646 S-03950--Rev. D, 26-May-03 www.vishay.com Symbol RthJA Limit 62.5 Unit _C/W 2-1 SI4980DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currena Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 3.7 A VGS = 6.0 V, ID = 3.2 A VDS = 15 V, ID = 3.7 A IS = 1.7 A, VGS = 0 V 20 0.062 0.071 12 1.2 0.075 0.095 2 "100 1 20 mA A W S V V nA Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 40 V, RL = 40 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 1 10 10 30 10 75 VDS = 40 V, VGS = 10 V, ID = 3.7 A 15 4 3.2 5.1 20 20 60 20 110 ns W 30 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design aid only; not subject to production testing. www.vishay.com 2-2 Document Number: 70646 S-03950--Rev. D, 26-May-03 SI4980DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 30 Transfer Characteristics 24 VGS = 10 thru 6 V I D - Drain Current (A) 18 5V 12 I D - Drain Current (A) 24 18 12 TC = 125_C 6 25_C - 55_C 6 4V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 1200 Capacitance r DS(on)- On-Resistance ( W ) 0.16 C - Capacitance (pF) 900 Ciss 0.12 VGS = 6 V 600 0.08 VGS = 10 V 0.04 300 Crss Coss 0.00 0 6 12 18 24 30 0 0 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 VDS = 40 V ID = 3.7 A 2.0 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 6 r DS(on)- On-Resistance ( W ) (Normalized) 8 1.6 VGS = 10 V ID = 3.7 A 1.2 4 0.8 2 0.4 0 0 3 6 9 12 15 0.0 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70646 S-03950--Rev. D, 26-May-03 www.vishay.com 2-3 SI4980DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.20 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on)- On-Resistance ( W ) 0.15 ID = 3.7 A 0.10 TJ = 150_C 0.05 TJ = 25_C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 1.0 50 Single Pulse Power 40 0.5 VGS(th) Variance (V) ID = 250 mA 0.0 30 Power (W) 20 - 0.5 10 - 1.0 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.10 1.00 Time (sec) 10.00 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70646 S-03950--Rev. D, 26-May-03 |
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